The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)

The effect of solder joint fabrication on the thermal properties IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness 1.50 mm, covered 35 ?m thick Cu layer, were used. A surface finish prepared from hot air leveling (HAL) Sn99Cu0.7Ag0.3 layer 1 ÷ 40 ?m. IGBT transistors NGB8207BN SACX0307 (Sn99Ag0.3Cu0.7) paste. samples in different soldering ovens and at temperature profiles. impedance Zth(t) resistance Rth measured. Microstructural voids analyses performed. It found that differences for reached 15% 20% Rth, respectively. Although ratio gas joints varied between 3% 30%, no correlation void ratios increase found. In case technologies, microstructure showed significant intermetallic compounds (IMC) layer; these correlated well time above liquidus during process. parameters could be changed due to increased conductivity IMC as compared bulk. Our research highlighted importance technology used profile assembly components.